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• Trallero Giner, C. 1986-09-01 We use the effective-mass approximation to obtain the imaginary part, ε 2, of the dielectric constant of a quantum well in an applied electric field for direct transitions at a normal (M O ) threshold. The calculations of ε 2 are used to evaluate the real part, ε 1, of the dielectric constant through the Kramers-Kronig relations. The changes in ε 1 and ε 2 due to the electric field are expressed in terms of the corresponding electrooptic functions. All magnitudes are obtained, neglecting excitonic effects, for electric fields both perpendicular to and in the plane of the layers.

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We show that for fields parallel to the layers the electrooptic functions turn out to be a superposition of two-dimensional Franz- Keldysh ones. The electrooptic functions for fields perpendicular to the layers show a qualitatively different behaviour from those observed in bulk semiconductors. Analytic expressions for the Lorentzian broadening of ε 1 and ε 2 are given in terms of complex valued electrooptic functions of complex argument. Kommercheskoe predlozhenie na okna pvh obrazec. (author) • Su, Yuehua, E-mail: suyh@ytu.edu.cn 2016-03-01 Inelastic low-energy Raman and high-energy X-ray scatterings have made great progress in instrumentation to investigate the strong electronic correlations in matter. However, theoretical study of the relevant scattering spectrum is still a challenge. In this paper, we present a Schwinger– Keldysh canonical perturbation formalism for the electronic Raman scattering, where all the resonant, non-resonant and mixed responses are considered uniformly.